Power Electronics Device Applications of Diamond Semiconductors

Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices.

Satoshi Koizumi received doctor of engineering (electrical engineering and electronics) at Aoyama Gakuin University (Tokyo, Japan) and joined the diamond research group at National Institute for Materials Science (NIMS), Tsukuba in 1994. Presently, he works as a principal researcher at NIMS on the topics of semiconducting diamond growth and device applications. He established the n-type diamond (which does not exist in nature) growth technique and has succeeded in deep ultraviolet LED formation by diamond pn junctions for the first time. He has worked on CVD diamond research for more than 25 years and published more than 150 refereed journal papers with about 3000 citations. In 2014, he started a research project of diamond power electronics in the Strategic Innovation Program (SIP) Japan cabinet office. Hitoshi Umezawa studied electrical engineering and materials science at Waseda University, Japan, where he graduated in 2002 with a doctoral degree in engineering. After that, he became a Post-Doc at Waseda University financed by Japan Society of the Promotion of Science (JSPS). In 2005 he became a researcher at Diamond Research Center in National Institute of Advanced Industrial Science and Technology (AIST), Japan. He teaches semiconductor devices and power electronics as a visiting professor at Chiba University, Japan. He is lanef Chair, whom the research activities are funded by University Grenoble Alpes, France. His research interests include diamond growth and characterization, high power and high frequency devices and related device fabrication processes. He has more than 120 publications in refereed journals. Julien Pernot is Professor at University Grenoble Alpes and Institut NEEL/CNRS, (France). He is Chair of the Department of Electronics Electrical Engineering Control and Systems at University Grenoble Alpes. Julien received his PhD degree at the University of Montpellier (France) in 2001 where he worked on the electrical transport properties of silicon carbide up to 2002. In 2003, he got an associate professor position at University Grenoble Alpes and at Institut NEEL/CNRS. His current research interests focus on the electrical transport properties of diamond, SiC, ZnO, GaN and related materials. His main scientific contribution is related to innovative devices and electrical measurements performed on thin films, micro- or nanowires wide bandgap semiconductors. He integrated the “Institut Universitaire de France” in 2012 and is promoted as Professor in 2016. He is co-authors of more than 100 papers. Julien is Editorial Board Member of Scientific Reports. He is involved in the organisation of several international diamond conferences and workshops, including the International Conference on Diamond and Carbon Materials (co-Chair, 2017~), New Diamond and Nano Carbons (Programme Committee, 2016-2017), Hasselt Diamond Workshop (Programme Committee, 2014~), and Chair of the Diamond Power Electronics Symposium in 2016 MRS Spring Meeting, an